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Shanghai LaserMa Crystals Inc.
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Click to enlarge image
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The lattice parameter of Lithium Aluminium Oxide (γ) (LiAlO2) crystal can match with the Gallium Nitride film very well. The mismatch coefficients are 0.2% and 1.4% only for LiAlO2, much smaller than that of the common used substrates such as <0001> sapphire (14%), <100>
MgO (3%), <0001> SiC (3.5%). The Gallium Nitride film is a very
important material for blue, violet, UV and white LED. A substrate material that matches the film to be grown well is very important to get a nice GaN epitaxial film.
1.Crystal Property
Substrate
LiAlO2
Crystal structure
422 tetragonal
Cell parameter
a=5.1687 ? c=6.2676 ?
Melting point(°K)
1973
Density (g/cm3)
2.615
Thermal expansion(x10-6k-1)
αa=7.1
αc=15
(393-973°K)
Hardness(Mohs)
6.5
Growth Method
Czockralski
2. Main Specifications:
Orientation:
<100>, <110>,<111>
Orientation accuracy:
±0.5°
Edge Orientation accuracy:
2°(or 1°for special order)
Thickness tolerance:
±0.02mm Or ±0.005mm
Cut with special tilt angle:
available(tilt angle:1°-45°)
Standard Size:
Ф20, 20x20,10x10,10x5,10x3mm
Thickness:
0.5mm 1.0mm.
Dimension Tolerance
+/-0.05mm
Faltness:
λ/4@633nm
Micro roughness
(5μm?μm)
Ra:≤5?
Parallelism
< 30 arc Sec.
AR coatinfg
R<0.2% at centret wavlength
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