Home > Buy Now > Other Electrical Equipment > LIALO2
 


Shanghai LaserMa Crystals Inc.
 
icon Products

line

icon Company Profile
icon Selling Leads

line

 
Contact us
Shanghai LaserMa Crystals Inc.
[China]
Address:
No.518, Shengwang Road, Xinzhuang, Minhang district Shanghai Shanghai China
Phone:
86-21-69982303
Contact name:
Hellen
Inquire now










Shanghai LaserMa Crystals Inc.



 
Products

LIALO2

Inquire now

LIALO2

Click to enlarge image


The lattice parameter of Lithium Aluminium Oxide (γ) (LiAlO2) crystal can match with the Gallium Nitride film very well. The mismatch coefficients are 0.2% and 1.4% only for LiAlO2, much smaller than that of the common used substrates such as <0001> sapphire (14%), <100>
MgO (3%), <0001> SiC (3.5%). The Gallium Nitride film is a very
important material for blue, violet, UV and white LED. A substrate material that matches the film to be grown well is very important to get a nice GaN epitaxial film.
1.Crystal Property
Substrate
LiAlO2

Crystal structure
422 tetragonal

Cell parameter
a=5.1687 ? c=6.2676 ?

Melting point(°K)
1973

Density (g/cm3)
2.615

Thermal expansion(x10-6k-1)
αa=7.1

αc=15

(393-973°K)

Hardness(Mohs)
6.5

Growth Method
Czockralski


2. Main Specifications:
Orientation:
<100>, <110>,<111>

Orientation accuracy:
±0.5°

Edge Orientation accuracy:
2°(or 1°for special order)

Thickness tolerance:
±0.02mm Or ±0.005mm

Cut with special tilt angle:
available(tilt angle:1°-45°)

Standard Size:
Ф20, 20x20,10x10,10x5,10x3mm

Thickness:
0.5mm 1.0mm.

Dimension Tolerance
+/-0.05mm

Faltness:
λ/4@633nm

Micro roughness

(5μm?μm)
Ra:≤5?

Parallelism
< 30 arc Sec.

AR coatinfg
R<0.2% at centret wavlength



Inquire now