LIALO2

The lattice parameter of Lithium Aluminium Oxide (γ) (LiAlO2) crystal can match with the Gallium Nitride film very well. The mismatch coefficients are 0.2% and 1.4% only for LiAlO2, much smaller than that of the common used substrates such as <0001> sapphire (14%), <100> MgO (3%), <0001> SiC (3.5%). The Gallium Nitride film is a very important material for blue, violet, UV and white LED. A substrate material that matches the film to be grown well is very important to get a nice GaN epitaxial film. 1.Crystal Property Substrate LiAlO2 Crystal structure 422 tetragonal Cell parameter a=5.1687 ? c=6.2676 ? Melting point（°K） 1973 Density （g/cm3） 2.615 Thermal expansion（x10-6k-1） αa=7.1 αc=15 (393-973°K) Hardness（Mohs） 6.5 Growth Method Czockralski 2. Main Specifications: Orientation： ＜100＞, ＜110＞,＜111＞ Orientation accuracy: ±0.5° Edge Orientation accuracy: 2°（or 1°for special order） Thickness tolerance: ±0.02mm Or ±0.005mm Cut with special tilt angle： available(tilt angle:1°-45°) Standard Size: Ф20, 20x20,10x10,10x5,10x3mm Thickness: 0.5mm 1.0mm. Dimension Tolerance +/-0.05mm Faltness: λ/4@633nm Micro roughness （5μm?μm） Ra:≤5? Parallelism < 30 arc Sec. AR coatinfg R<0.2% at centret wavlength